HRLO250N10K Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – High Dense Cell Design

Typical Characteristics
100
V_GS
Top : 10 V
8V
80
7V
6V
5V
4V
3.5 V
60
3.0 V
Bottom : 2.5 V
40
* Notes :
1. 300us Pulse Test
20
2. T_C = 25^oC
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
40
35
30
V_GS = 4.5V
25
V_GS = 10V
20
15
Note : T = 25oC
J
10
0
10 20 30
40 50 60 70 80 90
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
6000
5000
4000
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
3000
2000
1000
C_rss
0
* Note ;
1. V_GS = 0 V
C_oss
2. f = 1 MHz
20
40
60
80
100
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
T_J=25^oC
80
60
40
20
* Notes :
1. V_DS= 5V
2. 300us Pulse Test
0
0
1
2
3
4
5
6
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
125^oC 25^oC
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 80V
DS
I_D = 7.9A
0
0
20
40
60
80
100
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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