HRLO250N10K Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – High Dense Cell Design

Jan 2016
HRLO250N10K
100V N-Channel Trench MOSFET
Features
‰ High Dense Cell Design
‰ Reliable and Rugged
‰ Advanced Trench Process Technology
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), typ @10V}
R_{DS(on), typ @4.5V}
Value
100
7.9
20
22
Unit
V
A
Pȍ
Pȍ
Application
‰ Power Management in Inverter System
‰ Synchronous Rectification
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings T_A=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
P_D
T_J, T_STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
T_A = 25୅
T_A = 70୅
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation
T_A = 25୅
T_A = 70୅
Operating and Storage Temperature Range
100
ρ20
7.9
6.3
32
96
3.1
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
୅
Thermal Resistance Characteristics
Symbol
Parameter
R_șJL
Junction-to-Lead
Junction-to-Ambient (t”10s)
R_șJA
Junction-to-Ambient (steady state)
Typ.
--
--
--
Max.
24
40
75
Units
୅/W
୅/W
୅/W
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