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HRLO250N10K Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – High Dense Cell Design
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Off Characteristics
VDS = VGS, ID = 250 Ꮃ
VGS = 10 V, ID = 7.9 A
VGS = 4.5 V, ID = 6 A
VDS = 5, ID = 7.9 A
1.0
-- 2.4
V
-- 20.0 25.0 mŸ
-- 22.0 27.5 mŸ
--
28
--
S
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ
VDS = 80 V, VGS = 0 V
VDS = 80 V, TJ = 125୅
VGS = ρ20 V, VDS = 0 V
100 --
--
V
--
--
1
Ꮃ
--
-- 100 Ꮃ
--
-- ρ100 Ꮂ
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 4200 --
Ꮔ
-- 190 --
Ꮔ
--
135
--
Ꮔ
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
1.6
--
Ÿ
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
--
VDS = 50 V, ID = 7.9 A,
--
RG = 6 Ÿ
--
--
--
VDS = 80 V, ID = 7.9 A,
--
VGS = 10 V
--
Source-Drain Diode Maximum Ratings and Characteristics
32
--
Ꭸ
23
--
Ꭸ
220 --
Ꭸ
25
--
Ꭸ
90 120 nC
9
--
nC
18
--
nC
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7.9 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 7.9 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
-- 7.9
A
--
--
32
--
--
1.3
V
--
45
--
Ꭸ
--
75
--
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=12A, VDD=25V, RG=25:, Starting TJ =25qC
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