MMDT2227_15 Datasheet, PDF (6/6 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

Elektronische Bauelemente
MMDT2227
NPN-PNP Silicon
Multi-Chip Transistor
PNP2907
10
8.0
TYPICAL SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
f = 1.0 kHz
8.0
6.0
IC = –1.0 mA, Rs = 430 Ω
6.0
–500 µA, Rs = 560 Ω
–50 µA, Rs = 2.7 kΩ
4.0
–100 µA, Rs = 1.6 kΩ
4.0
2.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
IC = –50 µA
–100 µA
–500 µA
–1.0 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, Frequency (kHz)
50 100
Figure 17. Frequency Effects
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
Rs, Source Resistance (OHMS)
Figure 18. Source Resistance Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30
Reverse Voltage (VOLTS)
Figure 19. Capacitances
400
300
200
100
80
VCE = –20 V
60
TJ = 25°C
40
30
20
–1.0 –2.0
–5.0 –10 –20 –50 –100 –200
IC, Collector Current (mA)
–500 –1000
Figure 20. Current–Gain — Bandwidth Product
–1.0
TJ = 25°C
–0.8
–0.6
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
–0.4
–0.2
VCE(sat) @ IC/IB = 10
0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, Collector Current (mA)
Figure 21. “On” Voltage
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
+0.5
0
R_qVC for VCE(sat)
–0.5
–1.0
–1.5
–2.0
R_qVB for VBE
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, Collector Current (mA)
Figure 22. Temperature Coefficients
Any changing of specification will not be informed individual
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