MMDT2227_15 Datasheet, PDF (5/6 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

Elektronische Bauelemente
MMDT2227
NPN-PNP Silicon
Multi-Chip Transistor
PNP2907
TYPICAL CHARACTERISTICS
3.0
VCE = –1.0 V
2.0
VCE = –10 V
1.0
0.7
0.5
TJ = 125°C
25°C
– 55°C
0.3
0.2
–0.1
–0.2 –0.3 –0.5 –0.7 –1.0
–2.0 –3.0 –5.0 –7.0 –10
IC, Collector Current (mA)
–20 –30
Figure 13. DC Current Gain
–50 –70 –100
–200 –300 –500
–1.0
–0.8
IC = –1.0 mA
–0.6
–10 mA
–100 mA
–500 mA
–0.4
–0.2
0
–0.005 –0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2 –0.3 –0.5 –0.7 –1.0
IB, Base Current (mA)
–2.0 –3.0
Figure 14. Collector Saturation Region
–5.0 –7.0 –10
–20 –30 –50
300
200
100
tr
70
50
VCC = –30 V
IC/IB = 10
TJ = 25°C
30
20
td @ VBE(off) = 0 V
10
7.0
5.0
2.0 V
3.0
–5.0 –7.0 –10
–20 –30 –50 –70 –100
IC, Collector Current
–200 –300 –500
Figure 15. Turn–On Time
500
300
200
tf
100
70
50
30
t′_s = ts – 1/8 tf
20
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
–5.0 –7.0 –10
–20 –30 –50 –70 –100
IC, Collector Current (mA)
–200 –300 –500
Figure 16. Turn–Off Time
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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