MMDT2227_15 Datasheet, PDF (3/6 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

Elektronische Bauelemente
MMDT2227
NPN-PNP Silicon
Multi-chip Transistor
NPN2222
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
IC, Collector Current (mA)
Figure 3. DC Current Gain
50 70 100
200 300 500 700 1.0 k
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30 50
I _B, Base Current (mA)
Figure 4. Collector Saturation Region
200
IC/IB = 10
100
TJ = 25°C
70
50
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
30
td @ VEB(off) = 0
20
10
7.0
5.0
3.0
2.0
5.0 7.0 10
20 30 50 70 100
IC, Collector Current (mA)
200 300 500
Figure 5. Turn – On Time
500
300
200
t′_s = ts – 1/8 tf
100
70
50
tf
30
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
5.0 7.0 10
20 30 50 70 100
IC, Collector Current (mA)
200 300 500
Figure 6. Turn – Off Time
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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