MMDT2227_15 Datasheet, PDF (1/6 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

Elektronische Bauelemente
MMDT2227
NPN-PNP Silicon
Multi-Chip Transistor
RoHS Compliant Product
* Features
SOT-363
Power dissipation
PCM : 0.2 W (Tamp.= 25 ^OC)
Collector current
ICM : 0.2/-0.2 A
Collector-base voltage
V(BR)CBO : 75/-60 V
Operating & Storage junction Temperature
Tj, Tstg : -55^OC~ +150^OC
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
C₂
B₁
E₁
.043(1.10)
.035(0.90)
8^o
0^o
.053(1.35)
.045(1.15)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
E₂
B₂
C₁
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25^OC unless otherwise specified)
NPN2222A ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V_(BR)CBO Ic=10μA,I_E=0
75
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V_(BR)CEO Ic=10mA,I_B=0
V_(BR)EBO I_E=10μA,I_C=0
40
V
6
V
Collector cut-off current
I_CBO
V_CB=60V,I_E=0
10
nA
Emitter cut-off current
I_EBO
V_EB=3V,I_C=0
10
nA
DC current gain
h_FE
V_CE=10V,I_C=150mA
100
300
Collector-emitter saturation voltage
V_CE(sat)1 I_C=150mA,I_B=15mA
V_CE(sat)2 I_C=500mA,I_B=50mA
0.3
V
1
V
Base -emitter saturation voltage
V_BE(sat)1 I_C=150mA,I_B=15mA
V_BE(sat)2 I_C=500mA,I_B=50mA
1.2
V
2
V
Transition frequency
f_T
V_CE=20V,I_C=20mA,f=100MHz
300
MHz
Collector output capacitance
Noise Figure
C_ob
V_CB=10V,I_E=0,f=1MHz
NF
V_CE=10V,I_c=0.1mA,
f=1KHZ,Rs=1KΩ
8
pF
4
dB
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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