SGT8810 Datasheet, PDF(4/4 Page) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

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SGT8810 Datasheet, PDF (4/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

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Elektronische Bauelemente

SGT8810

7A, 20V,RDS(ON)20m

N-Channel Enhancement Mode Power Mos.FET

Fig 7. Maximum Safe Operating Area

Fig 8. Single Pulse Power Rating

Junction-to-Ambient

v.s. Junction Temperature

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

125Ðº/W

http://www.SeCoSGmbH.com/

01-Jun-2002 Rev. A

Fig 11. Normalized Maximum Transient Thermal Impedance

Curve

Any changing of specification will not be informed individual

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