SGT8810 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
Description
The SGT8100 used advanced trench technology to provide
excellent on-resistance which is an extremely efficient and
cost-effective device. It also provides low gate charge and
operates with gate voltages as low as 1.8 V. Suitable usage
in load switch and/or PWM applications.
This device is ESD protected.
Features
* ESD Rating: 2 kV HBM
* Low on-resistance
* Capable of 1.8V gate drive
SGT8810
7A, 20V,RDS(ON)20m
N-Channel Enhancement Mode Power Mos.FET
D1
D2
G1
G2
S1
S2
REF.
A
A1
b
c
D
Millimeter
Min. Max.
-
1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
E
E1
e
L
S
Millimeter
Min. Max.
6.20
6.60
4.30
4.50
0.65 BSC
0.45
0.75
0°
8°
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
3
Continuous Drain Current
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient ³
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=70^oC
IDM
PD@TA=25^oC
Tj, Tstg
Max.
Symbol
Rthj-a
Ratings
20
±8
7.0
5.7
30
1
0.008
-55~+150
Ratings
125
Unit
V
V
A
A
A
W
W / ^oC
o_C
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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