SGT8810 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
Characteristics Curve
SGT8810
7A, 20V,RDS(ON)20m
N-Channel Enhancement Mode Power Mos.FET
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance vs. Drain
Current and Gate Voltage
Fig 4. On-Resistance vs.
Junction Temperature
10
1
0.1 _0.1
0.01_0.01
0.00₀1_.001
0.00₀0_.01₀₀₁
0.00001
Fig 5. On-Resistance
vs. Gate-Source Voltage
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 6. Body Diode Characteristics
Any changing of specification will not be informed individual
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