SGT8810 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SGT8810
7A, 20V,RDS(ON)20 m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25^oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Resistance
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25^oC)
Drain-Source Leakage Current(Tj=55^oC)
Symbol
BVDSS
VGS(th)
Rg
IGSS
IDSS
Static Drain-Source On-Resistance²
RD S(O N )
Total Gate Charge²
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time²
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Min.
20
0.4
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
_
1.5
_
_
_
_
_
_
16
0.8
3.8
6.2
12.7
51.7
16
1160
187
146
Max.
_
1.0
_
±10
1
5
20
24
32
_
_
_
_
_
_
_
_
_
_
Unit
V
V
uA
uA
uA
m
Test Condition
VGS=0V, ID=250uA
VDS=VGS,ID=250uA
f=1.0MHz
VGS= ± 8V
VDS=20V,VGS=0
VDS=16V,VGS=0
VGS=4.5V, ID= 7A
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=5A
ID=7 A
nC
VDS=10V
VGS= 4.5V
VDS=10V
nS
VGS= 5 V
RG= 3
RL = 1.35
VGS=0V
pF
VDS=10V
f=1.0MHz
Forward Transconductance
Source-Drain Diode
Parameter
Forward On Voltage²
Reverse Recovery Time²
Reverse Recovery Charge
Continuous Source Current(Body Diode)
Gfs
Symbol
VSD
Trr
Qrr
IS
_
Min.
_
_
_
_
29
_
S
VDS= 5V, ID=7A
Typ.
_
17.7
6.7
_
Max.
1.0
_
_
2.5
Unit
V
nS
nC
A
Test Condition
IS=1A,VGS=0V
IS=7A,VGS=0V
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 in² copper pad of FR4 board.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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