CPH5852 Datasheet, PDF (2/6 Pages) Sanyo Semicon Device – MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

CPH5852
Electrical Characteristics at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGSS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--500mA, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
VDS=--10V, VGS=--10V, ID=--2A
IS=--2A, VGS=0V
VR
IR=0.5mA
VF1
IF=0.7A
VF2
IF=1.0A
IR
VR=16V
C
VR=10V, f=1MHz cycle
trr
IF=IR=100mA, See specified Test Circuit.
Ratings
Unit
min
typ
max
--30
--1.2
1.2
2.0
110
205
200
47
32
7.2
2.9
21
8.7
5.5
0.98
0.82
--0.85
V
--1 µA
±10 µA
--2.6
V
S
145 mΩ
290 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
--1.2
V
30
V
0.45
0.5
V
0.48
0.53
V
15 µA
27
pF
10 ns
Package Dimensions
unit : mmm
7017A-005
2.9
5 43
1
0.95
2
0.4
0.15
0.05
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Electrical Connection
5
4
3
1
2
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Top view
SANYO : CPH5
No. A0336-2/6