CPH5852 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

Ordering number : ENA0336
CPH5852
SANYO Semiconductors
DATA SHEET
CPH5852
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• _{Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3),}
facilitating high-density mounting.
• [MOS]
• Low ON-resistance
• Ultrahigh-speed switching
• 4V drive
• [SBD]
• Short reverse recovery time
• Low forward voltage
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : YE
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm²!0.8mm) 1unit
50Hz sine wave, 1cycle
Ratings
Unit
--30
V
±20
V
--2
A
--8
A
0.9
W
150
°C
--55 to +125
°C
30
V
35
V
1
A
10
A
--55 to +125
°C
--55 to +125
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 60506PE MS IM TB-000023G26I ^INMo. A0336-1/6