FGF65A4H Datasheet, PDF (8/15 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A4H, MGF65A4H, FGF65A4H
10000
1000
C_ies
C_oes
100
C_res
f = 1 MHz,
V_GE = 0 V
10
0
10
20
30
40
50
Collector-Emitter Voltage, V_CE (V)
Figure 14. Capacitance Characteristics
1000
Inductive load,
I_C = 40 A, V_CE = 400 V,
V_GE = 15 V, R_G = 10 Ω
t_d(off)
100
t_r
t_f
t_d(on)
10
25 50 75 100 125 150 175
Junction Temperature, T_J (°C)
Figure 16. Switching Time vs. Junction Temperature
20
I_C = 40 A
V_CE ≈ 130 V
10
V_CE ≈ 520 V
0
0
20
40
60
80
Gate Charge, Qg (nC)
Figure 15. Typical Gate Charge
1000
100
t_d(off)
t_f
t_d(on)
10
t_r
Inductive load,
V_CE = 400 V, V_GE = 15 V,
R_G = 10 Ω, T_J = 175 °C
1
1
10
100
Collector Current, I_C (A)
Figure 17. Switching Time vs. Collector Current
xGF65A4H-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
8
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016