FGF65A4H Datasheet, PDF (3/15 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A4H, MGF65A4H, FGF65A4H
Electrical Characteristics
Unless otherwise specified, T_A = 25 °C
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Collector to Emitter Breakdown
Voltage
V_(BR)CES I_C = 100 μA, V_GE = 0 V
650
—
—
V
Collector to Emitter Leakage Current
I_CES
V_CE = 650 V, V_GE = 0 V
—
—
100
µA
Gate to Emitter Leakage Current
I_GES
V_GE = ±30 V
—
—
±500
nA
Gate Threshold Voltage
Collector to Emitter Saturation
Voltage
V_GE(TH) V_CE = 10 V, I_C = 1 mA
4.0
5.5
7.0
V
V_CE(sat) V_GE = 15 V, I_C = 40 A
—
1.9
2.37
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
C_ies
V_CE = 20 V,
C_oes
V_GE = 0 V,
C_res
f = 1.0 MHz
—
2300
—
—
250
—
pF
—
110
—
Q_g
V_CE = 520 V, I_C = 40 A,
V_GE = 15 V
—
75
—
nC
t_d(on)
—
40
—
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Energy ⁽³⁾
Turn-off Energy
t_r
t_d(off)
t_f
E_on
E_off
T_J = 25 °C,
see Figure 1.
—
40
—
ns
—
100
—
—
40
—
—
0.7
—
mJ
—
0.6
—
Turn-on Delay Time
t_d(on)
—
40
—
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Energy ⁽³⁾
Turn-off Energy
Emitter to Collector Diode Forward
Voltage
Emitter to Collector Diode Reverse
Recovery Time
t_r
t_d(off)
t_f
E_on
E_off
T_J = 175 °C,
see Figure 1.
V_F
I_F = 30 A
t_rr
I_F = 30 A,
di/dt = 700 A/μs
—
40
—
ns
—
130
—
—
60
—
—
1.3
—
mJ
—
0.9
—
—
1.8
—
V
—
50
—
ns
(3) _{Energy losses include the reverse recovery of diode.}
xGF65A4H-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
3
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016