 English |
|
|
|
|
|
|
|
| FGF65A4H Datasheet, PDF (2/15 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode | |||
| |||
| ◁ |
KGF65A4H, MGF65A4H, FGF65A4H
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Symbol
VCE
VGE
Continuous Collector Current (1)
IC
Pulsed Collector Current
IC(PULSE)
Diode Continuous Forward Current (1)
IF
Diode Pulsed Forward Current
IF(PULSE)
Short Circuit Withstand Time
tSC
Conditions
TC = 25 °C
TC = 100 °C
PW ⤠1 ms,
duty cycle ⤠1%
TC = 25 °C
TC = 100 °C
PW ⤠1 ms,
duty cycle ⤠1%
VGE = 15 V,
VCE = 400 V,
TJ = 175 °C
Power Dissipation
PD
TC = 25 °C
Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Rating
650
±30
65
40
120
40(2)
30
100
10
288
72
175
â55 to 150
Unit
Remarks
V
V
A
A
A
A
A
A
μs
MGF65A4H
W
KGF65A4H
FGF65A4H
°C
°C
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance of IGBT
(Junction to Case)
RθJC (IGBT)
Thermal Resistance of Diode
(Junction to Case)
RθJC (Di)
Conditions
Min. Typ. Max.
â â 0.52
â â 2.08
â â 1.15
â â 2.28
Unit
°C/W
°C/W
Remarks
MGF65A4H
KGF65A4H
FGF65A4H
MGF65A4H
KGF65A4H
FGF65A4H
(1) IC and IF are determined by the maximum junction temperature for TO3P-3L package.
(2) Determined by bonding wires capability.
xGF65A4H-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
2
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese