FGF65A4H Datasheet, PDF (7/15 Pages) Sanken electric – Trench Field Stop IGBTs with Fast Recovery Diode

KGF65A4H, MGF65A4H, FGF65A4H
100
V_CE = 5 V
80
60
40
T_J = 175 °C
20
T_J = 25 °C
0
0
5
10
15
Gate-Emitter Voltage, V_GE (V)
Figure 10. Transfer Characteristics
3.0
V_GE = 15 V
2.5
T_J = 175 °C
2.0
T_J = 25 °C
1.5
T_J = −55 °C
1.0
0.5
0
20
40
60
80
Collector Current, I_C (A)
Figure 12. Saturation Voltage vs. Collector Current
3.0
V_GE = 15 V
2.5
2.0
I_C = 80 A
I_C = 40 A
1.5
I_C = 20 A
1.0
-50 -25 0 25 50 75 100 125 150 175
Junction Temperature, T_J (°C)
Figure 11. Saturation Voltage vs. Junction
Temperature
7
6
5
4
3
2
-50 -25 0 25 50 75 100 125 150 175
Junction Temperature, T_J (°C)
Figure 13. Gate Threshold Voltage vs. Junction
Temperature
xGF65A4H-DSE Rev.1.4
SANKEN ELCTRIC CO., LTD.
7
Oct. 12, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016