K9K1G08R0B Datasheet, PDF (9/41 Pages) Samsung semiconductor – 128M x 8 Bit NAND Flash Memory

K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Advance
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
K9K1G08X0B-XCB0
Temperature Under Bias
K9K1G08X0B-XIB0
Storage Temperature
K9K1G08X0B-XCB0
K9K1G08X0B-XIB0
Short Circuit Current
Symbol
VIN/OUT
VCC
VCCQ
TBIAS
TSTG
Ios
Rating
Unit
1.8V Device
2.7V/3.3V Device
-0.6 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
V
-0.2 to + 2.45
-0.6 to + 4.6
-10 to +125
°C
-40 to +125
-65 to +150
°C
5
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K1G08X0B-XCB0 :TA=0 to 70°C, K9K1G08X0B-XIB0 :TA=-40 to 85°C)
Parameter
Symbol
K9K1G08R0B(1.8V)
Min
Typ.
Max
K9K1G08B0B(2.7V)
Min
Typ.
Max
K9K1G08U0B(3.3V)
Unit
Min
Typ.
Max
Supply Voltage
VCC
1.65
1.8
1.95
2.5
2.7
2.9
2.7
3.3
3.6
V
Supply Voltage
VCCQ
1.65
1.8
1.95
2.5
2.7
2.9
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
0
0
0
V
9