K9K1G08R0B Datasheet, PDF (1/41 Pages) Samsung semiconductor – 128M x 8 Bit NAND Flash Memory

K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Document Title
128M x 8 Bit NAND Flash Memory
Advance
FLASH MEMORY
Revision History
Revision No. History
0.0
Initial issue.
0.1
1. Note 1 ( Program/Erase Characteristics) is added( page 13 )
2. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 15 )
-Error in write or read operation ( page 16 )
-Program Flow Chart ( page 16 )
3. Vcc range is changed
-1.7V~1.95V ->1.65V~1.95V
4. 2.7V device is added
5. Multi plane operation and Copy-Back Program are not supported with 1.8V
device.
Draft Date Remark
Mar. 17th 2003 Advance
Oct. 11th 2004 Advance
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
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