K9K1G08R0B Datasheet, PDF (24/41 Pages) Samsung semiconductor – 128M x 8 Bit NAND Flash Memory

K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
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FLASH MEMORY
Multi-Plane Block Erase Operation into Plane 0~3 or Plane 4~7
CLE
CE
tWC
WE
ALE
tWB
tBERS
RE
I/O0~7
R/B
60h A9 ~ A16 A17 ~ A24 A25,A26 DOh
Page(Row)
Address
Busy
Block Erase Setup Command
Erase Confirm Command
71h
I/O 0
Read Multi-Plane
Status Command
Max. 4 times repeatable
* For Multi-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Four-Plane Block Erase Operation
R/B
tBERS
I/O0~7 60h Address 60h ^Address 60h ^{Address 60h Address}
D0h
71h
A9 ~ A26
24