K9K1G08R0B Datasheet, PDF (21/41 Pages) Samsung semiconductor – 128M x 8 Bit NAND Flash Memory

K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Read1 Operation(Intercepted by CE)
CLE
Advance
FLASH MEMORY
CE
WE
ALE
tWB
tAR
tR
tCHZ
tRC
RE
tRR
I/O0~7
R/B
00h or 01h A0 ~ A7 A9 ~ A16 A17 ~ A24 A25,A26
Column
Address
Page(Row)
Address
Busy
Dout N Dout N+1 Dout N+2
Read2 Operation(Read One Page)
CLE
CE
WE
ALE
RE
I/O0~7
R/B
tR
tWB
tAR
tRR
50h
A0 ~ A7 A9 ~ A16 A17 ~ A24 A25,A26
M Address
A0~A3 : Valid Address
A4~A7 : Don′t care
Dout
511+M
Dout 527
Selected
Row
512
16
Start
address M
21