K4S1G0732B Datasheet, PDF (9/12 Pages) Samsung semiconductor – SDRAM stacked 1Gb B-die

SDRAM stacked 1Gb B-die (x8)
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
Symbol
-75
Min
Max
CAS latency=3
7.5
CLK cycle time
tCC
CAS latency=2
10
1000
CLK to valid
output delay
CAS latency=3
tSAC
CAS latency=2
5.4
6
Output data
hold time
CAS latency=3
tOH
CAS latency=2
3
3
CLK high pulse width
tCH
2.5
CLK low pulse width
tCL
2.5
Input setup time
tSS
1.5
Input hold time
tSH
0.8
CLK to output in Low-Z
tSLZ
1
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
tSHZ
5.4
5.4
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
CMOS SDRAM
Unit Note
ns
1
ns
1,2
ns
2
ns
3
ns
3
ns
3
ns
3
ns
2
ns
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
3.8
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
5.6
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
5.0
Notes : _{1. Rise time specification based on 0pF + 50 Ω to VSS, use these values to design to.}
2. Fall time specification based on 0pF + 50 Ω to VDD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to VSS.
Unit
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Notes
3
3
1,2
1,2
Rev. 1.1 February 2004