K4S1G0732B Datasheet, PDF (7/12 Pages) Samsung semiconductor – SDRAM stacked 1Gb B-die

SDRAM stacked 1Gb B-die (x8)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
ICC2P
ICC2PS
ICC2N
ICC2NS
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P
ICC3PS
ICC3N
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Operating current
(Burst mode)
Refresh current
Self refresh current
IO = 0 mA
ICC4 ^{Page burst}
4banks Activated
tCCD = 2CLKs
ICC5 tRC ≥ tRC(min)
ICC6 CKE ≤ 0.2V
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S1G0732B-TC75
4. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
CMOS SDRAM
Version
-75
110
4
4
40
20
8
8
50
35
130
220
12
Unit Note
mA
1
mA
mA
mA
mA
mA
mA
1
mA
2
mA
3
Rev. 1.1 February 2004