K4S1G0732B Datasheet, PDF (5/12 Pages) Samsung semiconductor – SDRAM stacked 1Gb B-die

SDRAM stacked 1Gb B-die (x8)
PIN CONFIGURATION (Top view)
CMOS SDRAM
VDD 1
DQ0 2
VDDQ 3
N.C 4
DQ1 5
VSSQ 6
N.C 7
DQ2 8
VDDQ 9
N.C 10
DQ3 11
VSSQ 12
N.C 13
VDD 14
CS1 15
WE 16
CAS 17
RAS 18
CS0 19
BA0 20
BA1 21
A10/AP 22
A0 23
A1 24
A2 25
A3 26
VDD 27
54 VSS
53 DQ7
52 VSSQ
51 N.C
50 DQ6
49 VDDQ
48 N.C
47 DQ5
46 VSSQ
45 N.C
44 DQ4
43 VDDQ
42 N.C
41 VSS
40 CKE1
39 DQM
38 CLK
37 CKE0
36 A12
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
54Pin TSOP
(400mil x 875mil)
(0.8 mm Pin pitch)
PIN FUNCTION DESCRIPTION
Pin
CLK
Name
System clock
CS0~1
Chip select
CKE0~1
Clock enable
A0 ~ A12
Address
BA0 ~ BA1 Bank select address
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
DQM
Data input/output mask
DQ0 ~7
VDD/VSS
VDDQ/VSSQ
Data input/output
Power supply/ground
Data output power/ground
Input Function
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA12, Column address : CA0 ~ CA9, CA11
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active.
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
Rev. 1.1 February 2004