K4S1G0732B Datasheet, PDF (8/12 Pages) Samsung semiconductor – SDRAM stacked 1Gb B-die

SDRAM stacked 1Gb B-die (x8)
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)
Parameter
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
2.4/0.4
1.4
tr/tf = 1/1
1.4
See Fig. 2
3.3V
Output
870Ω
1200Ω
50pF
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Output
CMOS SDRAM
Unit
V
V
ns
V
Z0 = 50Ω
Vtt = 1.4V
50Ω
50pF
(Fig. 1) DC output load circuit
(Fig. 2) AC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time
Last data in to row precharge
Last data in to Active delay
Symbol
tRRD(min)
tRCD(min)
tRP(min)
tRAS(min)
tRAS(max)
tRC(min)
tRDL(min)
tDAL(min)
Version
-75
15
20
20
45
100
65
2
2 CLK + 20 ns
Unit
Note
ns
1
ns
1
ns
1
ns
1
us
ns
1
CLK
2
-
Last data in to new col. address delay
tCDL(min)
1
CLK
2
Last data in to burst stop
tBDL(min)
1
CLK
2
Col. address to col. address delay
tCCD(min)
1
CLK
3
Number of valid output data
CAS latency=3
CAS latency=2
2
ea
4
1
Notes :
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
Rev. 1.1 February 2004