M374S6453CTS Datasheet, PDF (7/11 Pages) Samsung semiconductor – M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM

M374S6453CTS
PC133/PC100 Unbuffered DIMM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Parameter
Symbol
-7C
Min Max
-7A
Min Max
-1H
Min Max
-1L
Unit Note
Min Max
CAS latency=3
CLK cycle time
tCC
CAS latency=2
7.5
7.5
10
10
1000
1000
1000
1000 ns 1
7.5
10
10
12
CLK to valid
output delay
CAS latency=3
tSAC
CAS latency=2
5.4
5.4
5.4
6
6
6
6
ns 1,2
7
Output data
hold time
CAS latency=3
tOH
CAS latency=2
3
3
3
3
3
3
3
ns 2
3
CLK high pulse width
tCH
2.5
2.5
3
3
ns 3
CLK low pulse width
tCL
2.5
2.5
3
3
ns 3
Input setup time
tSS
1.5
1.5
2
2
ns 3
Input hold time
tSH
0.8
0.8
1
1
ns 3
CLK to output in Low-Z
tSLZ
1
1
1
1
ns 2
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
tSHZ
5.4
5.4
5.4
6
6
6
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
6
ns
7
REV. 0.1 Sept. 2001