M374S6453CTS Datasheet, PDF (5/11 Pages) Samsung semiconductor – M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM

M374S6453CTS
PC133/PC100 Unbuffered DIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
Precharge standby cur-
rent in power-down mode
Precharge standby cur-
rent in non power-down
mode
ICC2P
ICC2PS
ICC2N
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P
ICC3PS
ICC3N
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
Operating current
(Burst mode)
IO = 0 mA
ICC4 ^{Page burst}
4banks Activated.
tCCD = 2CLKs
Refresh current
ICC5 tRC ≥ tRC(min)
Self refresh current
ICC6 CKE ≤ 0.2V
C
L
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
Version
Unit Note
-7C -7A -1H -1L
1170 1080 1080 1080 mA 1
36
mA
36
360
mA
180
108
mA
108
540
mA
450
mA
1260 1260 1170 1170 mA 1
2250 2070 1980 1980 mA 2
54
mA
27
mA
REV. 0.1 Sept. 2001