M368L3313DTL Datasheet, PDF (7/12 Pages) Samsung semiconductor – 256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)

M368L3313DTL
Output
184pin Unbuffered DDR SDRAM MODULE
Vtt=0.5*VDDQ
RT=50Ω
Z0=50Ω
CLOAD=30pF
VREF
=0.5*VDDQ
Output Load Circuit (SSTL_2)
Input/Output CAPACITANCE (VDD=2.5V, V DDQ=2.5V, TA= 25°C, f=1MHz)
Parameter
Symbol
Min
Input capacitance(A0 ~ A 11, BA0 ~ BA1,RAS ,CAS ,WE )
CIN1
65
Input capacitance(CKE0,CKE1)
CIN2
42
Input capacitance( CS 0, CS1)
CIN3
42
Input capacitance( CLK0, CLK 1,CLK 2)
CIN4
27
Data & DQS input/output capacitance(DQ0~DQ 63)
Input capacitance(DM0~DM8)
COUT
10
CIN5
10
Max
81
50
50
34
13
13
Unit
pF
pF
pF
pF
pF
pF
Rev. 0.2 May.2002