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K4H511638D Datasheet, PDF (7/24 Pages) Samsung semiconductor – 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
DDR SDRAM 512Mb D-die (x8, x16)
6.0 Block Diagram (16Mb x 8 / 8Mb x 16 I/O x4 Banks)
Preliminary
DDR SDRAM
CK, CK
ADD
Bank Select
CK, CK
x8/16
LWE
Data Input Register
Serial to parallel
LDM (x8)
LUDM (x16)
x8/16/32
8Mx16/ 4Mx32
8Mx16/ 4Mx32
8Mx16/ 4Mx32
8Mx16/ 4Mx32
x16/32
x8/16
x8/16
DQi
Column Decoder
Latency & Burst Length
LCKE
LRAS LCBR LWE
LCAS
Programming Register
LWCBR
LDM (x8)
LUDM (x16)
CK, CK
Timing Register
DM Input Register
Data Strobe
CK, CK CKE
CS
RAS CAS
WE
LDM (x8)
LUDM (x16)
Rev. 0.3 June. 2005