K4H511638D Datasheet, PDF (15/24 Pages) Samsung semiconductor – 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
DDR SDRAM
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Parameter
DDR400
Specification
DDR333 DDR200/266
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
TBD
TBD
TBD
TBD
TBD
TBD
1.2 V
1.2 V
2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
TBD
2.4 V-ns
VDDQ
Overshoot
5
4
Maximum Amplitude = 1.2V
3
2
Area = 2.4V-ns
1
0
-1
-2
Maximum Amplitude = 1.2V
-3
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
DQ/DM/DQS AC overshoot/Undershoot Definition
Rev. 0.3 June. 2005