K4H511638D Datasheet, PDF (17/24 Pages) Samsung semiconductor – 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
DDR SDRAM
20.0 System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure proper system
performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS
PARAMETER
SYMBOL
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
DDR333
MIN
MAX
TBD
TBD
DDR266
MIN
MAX
TBD
TBD
DDR200
MIN
MAX
0.5
4.0
Units
V/ns
Notes
a, m
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Input Slew Rate
∆tIS
∆tIH
Units
0.5 V/ns
0
0
ps
0.4 V/ns
+50
0
ps
0.3 V/ns
+100
0
ps
Notes
i
i
i
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Input Slew Rate
∆tDS
∆tDH
Units
0.5 V/ns
0
0
ps
0.4 V/ns
+75
+75
ps
0.3 V/ns
+150
+150
ps
Notes
k
k
k
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Delta Slew Rate
∆tDS
∆tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
j
+/- 0.25 V/ns
+50
+50
ps
j
+/- 0.5 V/ns
+100
+100
ps
j
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
Pulldown slew
1.2 ~ 2.5
1.0
4.5
Notes
a,c,d,f,g,h
b,c,d,f,g,h
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
Pulldown slew
1.2 ~ 2.5
0.7
5.0
Notes
a,c,d,f,g,h
b,c,d,f,g,h
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
DDR266B
PARAMETER
MIN
MAX
Output Slew Rate Matching Ratio (Pullup to Pulldown) TBD
TBD
DDR200
MIN
MAX
0.67
1.5
Notes
e,m
Rev. 0.3 June. 2005