K4H511638D Datasheet, PDF (13/24 Pages) Samsung semiconductor – 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
DDR SDRAM
15.0 DDR SDRAM IDD spec table
(V_DD=2.7V, T = 10°C)
Symbol
64Mx8 (K4H510838D)
Unit Notes
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0
120
105
95
95
mA
IDD1
150
135
125
125
mA
IDD2P
5
5
5
5
mA
IDD2F
30
30
30
30
mA
IDD2Q
25
25
25
25
mA
IDD3P
45
30
30
30
mA
IDD3N
60
45
45
45
mA
IDD4R
155
140
125
125
mA
IDD4W
175
150
130
130
mA
IDD5
220
205
195
195
mA
Normal
5
5
5
5
mA
IDD6
Low power
3
3
3
3
mA Optional
IDD7A
385
360
325
325
mA
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
32Mx16 (K4H511638D)
Unit Notes
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
120
105
95
95
mA
160
140
130
130
mA
5
5
5
5
mA
30
30
30
30
mA
25
25
25
25
mA
45
30
30
30
mA
60
45
45
45
mA
190
170
155
155
mA
215
185
160
160
mA
220
205
195
195
mA
5
5
5
5
mA
3
3
3
3
mA Optional
400
380
345
345
mA
Rev. 0.3 June. 2005