K4E171611D Datasheet, PDF (7/35 Pages) Samsung semiconductor – 1M x 16Bit CMOS Dynamic RAM with Extended Data Out

K4E171611D, K4E151611D
K4E171612D, K4E151612D
CMOS DRAM
NOTES
1. An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles
before proper device operation is achieved.
2. Input voltage levels are Vih/Vil. VIH(min) and VIL(max) are reference levels for measuring timing of input signals.
Transition times are measured between VIH(min) and VIL(max) and are assumed to be 2ns for all inputs.
3. Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF.
4. Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only.
If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
5. Assumes that tRCD≥tRCD(max).
6. This parameter defines the time at which the output achieves the open circuit condition and is not referenced to Voh or Vol.
7. tWCS, tRWD, tCWD, tAWD and tCPWD are non restrictive operating parameters. They are included in the data sheet as electrical
characteristics only. If tWCS≥tWCS(min), the cycle is an early write cycle and the data output will remain high impedance for the
duration of the cycle. If tCWD≥tCWD(min), tRWD≥tRWD(min), tAWD≥tAWD(min) and tCPWD≥tCPWD(min), then the cycle is a read-
modify-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions
is satisfied, the condition of the data out is indeterminate.
8. Either tRCH or tRRH must be satisfied for a read cycle.
9. These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in OE controlled write cycle
and read-modify-write cycles.
10. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only.
If tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA.
K4E17(5)1611(2)D Truth Table
RAS
LCAS
UCAS
W
H
X
X
X
L
H
H
X
L
L
H
H
L
H
L
H
L
L
L
H
L
L
H
L
L
H
L
L
L
L
L
L
L
L
L
H
OE
DQ0 - DQ7
X
Hi-Z
X
Hi-Z
L
DQ-OUT
L
Hi-Z
L
DQ-OUT
H
DQ-IN
H
-
H
DQ-IN
H
Hi-Z
DQ8-DQ15
Hi-Z
Hi-Z
Hi-Z
DQ-OUT
DQ-OUT
-
DQ-IN
DQ-IN
Hi-Z
STATE
Standby
Refresh
Byte Read
Byte Read
Word Read
Byte Write
Byte Write
Word Write
-