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K4E171611D Datasheet, PDF (10/35 Pages) Samsung semiconductor – 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
K4E171611D, K4E151611D
K4E171612D, K4E151612D
LOWER BYTE READ CYCLE
NOTE : DIN = OPEN
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tRC
tRAS
tCRP
tCRP
tRCD
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tRCS
tCSH
tRSH
tCAS
tCAH
COLUMN
ADDRESS
tRAL
tAA
tRAC
OPEN
tOEA
tCAC
tCLZ
tOLZ
OPEN
CMOS DRAM
tRP
tRPC
tRRH
tRCH
tCEZ
tOEZ
DATA-OUT
Don′t care
Undefined