K4E171611D Datasheet, PDF (27/35 Pages) Samsung semiconductor – 1M x 16Bit CMOS Dynamic RAM with Extended Data Out

K4E171611D, K4E151611D
K4E171612D, K4E151612D
HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
VIL -
tRASP
tRP
tCSH
tHPRWC
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
tCRP
tRCD
tCAS
tCRP
tRCD
tASR
tRAD
tRAH
tASC
ROW
ADDR
COL.
ADDR
tRCS
tCAS
tCAH
tCWL
tCWD
tAWD
tRWD
tRSH
tCP
tCAS
tCP
tCAS
tASC
tCAH
COL.
ADDR
tRCS
tRAL
tRWL
tCWL
tWP
tWP
tCWD
tAWD
tCPWD
tCRP
tCRP
VIH -
OE
VIL -
DQ0 ~ DQ7
VI/OH -
VI/OL -
tOEA
tOEA
tCAC
tAA
tRAC
tOED
tOEZ
tDH
tDS
tCAC
tAA
tOED
tOEZ
tDH
tDS
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
DQ8 ~ DQ15
VI/OH -
VI/OL -
tCAC
tAA
tRAC
tOED
tOEZ
tDH
tDS
tCAC
tAA
tOED
tOEZ
tDH
tDS
tCLZ
VALID
DATA-OUT
tCLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined