K4E171611D Datasheet, PDF (4/35 Pages) Samsung semiconductor – 1M x 16Bit CMOS Dynamic RAM with Extended Data Out

K4E171611D, K4E151611D
K4E171612D, K4E151612D
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
ICCS
Power
Don′t care
Normal
L
Don′t care
Don′t care
Normal
L
Don′t care
L
L
Speed
-45
-50
-60
Don′t care
-45
-50
-60
-45
-50
-60
Don′t care
-45
-50
-60
Don′t care
Don′t care
K4E171612D
100
90
80
1
1
100
90
80
110
100
90
0.5
200
100
90
80
300
150
Max
K4E151612D
K4E171611D
150
100
140
90
130
80
1
2
1
1
150
100
140
90
130
80
110
110
100
100
90
90
0.5
1
200
200
150
110
140
90
130
80
200
350
150
200
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Hyper Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS, UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
DQ=Don′t care, TRC=31.25us(4K/L-ver), 125us(1K/L-ver)
TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
CMOS DRAM
K4E151611D
150
140
130
2
1
150
140
130
110
100
90
1
200
150
140
130
250
200
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
*Note : _{ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.}
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one Hyper page mode cycle time, tHPC.