K4R271669D Datasheet, PDF (6/20 Pages) Samsung semiconductor – 128Mbit RDRAM(D-die)

K4R271669D
Preliminary
Direct RDRAM^™
DQB7..DQB0
8
RQ7..RQ5 or
ROW2..ROW0
3
1:8 Demux
CTM CTMN SCK,CMD SIO0,SIO1 CFM CFMN
2
2
RCLK
RQ4..RQ0 or
COL4..COL0
5
1:8 Demux
DQA7..DQA0
8
RCLK
Packet Decode
ROWR
ROWA
11 5 5 9
ROP DR BR R
AV
TCLK
Control Registers
RCLK
COLX
655
Packet Decode
COLC
5556
COLM
88
REFR Power Modes DEVID XOP DX BX COP DC BC C MB MA
M
S
Match
Mux
DM _{Row Decode}
PRER
ACT
Sense Amp
32x64
Internal DQB Data Path ₆₄
DRAM Core
32x64 512x64x128
Bank 0
64
Bank 1
8
8
Bank 2
Match
XOP Decode
PREX
Match
Write
Buffer
Mux Mux
Column Decode & Mask
PREC
RD, WR
32x64
64
Internal DQA Data Path
64
8
8
Bank 13
8
Bank 14
8
Bank 15
8
8
Bank 16
Bank 17
Bank 18
Bank 29
Bank 30
Bank 31
8
8
Figure 2: 128Mbit(256Kx16x32s) Direct RDRAM Block Diagram
Page 4
Version 1.0 Dec. 2001