K4R271669D Datasheet, PDF (18/20 Pages) Samsung semiconductor – 128Mbit RDRAM(D-die)

K4R271669D
Absolute Maximum Ratings
Table 14: Absolute Maximum Ratings
Symbol
V_I,ABS
V_DD,ABS, V_DDA,ABS
T_STORE
Parameter
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
Min
- 0.3
- 0.5
- 50
Preliminary
Direct RDRAM^™
Max
V_DD+0.3
V_DD+1.0
100
Unit
V
V
°C
I_DD - Supply Current Profile
Table 15: Supply Current Profile
Min
I_DD value
RDRAM Power State and Steady-State Transaction Rates^a
I_DD,PDN
I_DD,NAP
I_DD,STBY
I_DD,REFRESH
I_DD,ATTN
I_DD,ATTN-W
I_DD,ATTN-R
Device in PDN, self-refresh enabled and INIT.LSR=0.
-
Device in NAP.
-
Device in STBY. This is the average for a device in STBY with (1) no packets on the Chan-
-
nel, and (2) with packets sent to other devices.
Device in STBY and refreshing rows at the t_REF,MAX period.
-
Device in ATTN. This is the average for a device in ATTN with (1) no packets on the Chan-
-
nel, and (2) with packets sent to other devices.
Device in ATTN. ACT command every 8•t _CYCLE, PRE command every 8•t_CYCLE, WR
-
command every 4•t_CYCLE, and data is 1100..1100
Device in ATTN. ACT command every 8•t _CYCLE, PRE command every 8•t_CYCLE, RD
-
command every 4•t_CYCLE, and data is 1111..1111^b
a. CMOS interface consumes power in all power states.
b. This does not include the I_OL sink current. The RDRAM dissipates I_OL•V_OL in each output driver when a logic one is driven.
Table 16: Supply Current at Initialization
Max
-45
-800
5000
4
75
75
115
500
480
Symbol
I_DD,PWRUP,D
I_DD,SETR,D
Parameter
I_DD from power -on to SETR
I_DD from SETR to CLRR
Allowed Range of t_CYCLE
3.33ns to 3.83ns
2.50ns to 3.32ns
3.33ns to 3.83ns
2.50ns to 3.32ns
V_DD
V_DD,MIN
V_DD,MIN
Min
-
-
Max
150^a
200
250
332
a.The supply current will be 150mA when t_CYCLE is in the range 15ns
to 1000ns.
Unit
µA
mA
mA
mA
mA
mA
mA
Unit
mA
mA
Page 16
Version 1.0 Dec. 2001