K4S561633C-RL Datasheet, PDF (5/8 Pages) Samsung semiconductor – 16Mx16 SDRAM 54CSP

K4S561633C-R(B)L/N/P
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V SS = 0V, TA =Commercial, Extended, Industrial Temperature)
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
Burst length = 1
ICC1 tRC ≥ tR C(min)
IO = 0 mA
Version
-75
-1H
-1L
Unit
90
85
85
mA
Precharge Standby Current
in power-down mode
ICC2P CKE ≤ VIL(max), t CC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), t CC = ∞
0.5
mA
0.5
Precharge Standby Current
IC C 2N
CKE ≥ VIH(min), CS ≥ VIH(min), t CC = 10ns
Input signals are changed one time during 20ns
15
in non power-down mode
IC C 2 NS
CKE ≥ VIH(min), CLK ≤ VIL(max), t CC = ∞
Input signals are stable
10
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), t CC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), t CC = ∞
6
mA
6
Active Standby Current
IC C 3N
CKE ≥ VIH(min), CS ≥ VIH(min), t CC = 10ns
Input signals are changed one time during 20ns
25
mA
in non power-down mode
(One Bank Active)
IC C 3 NS
CKE ≥ VIH(min), CLK ≤ VIL(max), t CC = ∞
Input signals are stable
25
mA
Operating Current
(Burst Mode)
IO = 0 mA
ICC4 ^{Page burst}
4Banks Activated
tCCD = 2CLKs
Refresh Current
ICC5 tRC ≥ tRC (min)
Self Refresh Current
ICC6 CKE ≤ 0.2V
-R(B)L
-R(B)N
-R(B)P
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S561633C-R(B)L**
4. K4S561633C-R(B)N**
5. K4S561633C-R(B)P**
6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
130
130
105 mA
185
185
165 mA
800
uA
Note
1
1
2
3
4
Rev. 1.4 Dec. 2002