K4S511632D Datasheet, PDF (5/9 Pages) Samsung semiconductor – DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL

K4S511632D
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VI N, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
2
50
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70° C)
Parameter
Symbol
Min
Supply voltage
VDD, VDDQ
3.0
Input logic high voltage
VIH
2.0
Input logic low voltage
V IL
-0.3
Output logic high voltage
VOH
2.4
Output logic low voltage
V OL
-
Input leakage current
ILI
-10
Typ
Max
Unit
3.3
3.6
V
3.0
VDD +0.3
V
0
0.8
V
-
-
V
-
0.4
V
-
10
uA
Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ .
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Clock
RAS, CAS , WE, DQM
Address, CS,CKE
D Q0 ~ DQ8
Symbol
Min
CCLK
5.0
C IN
5.0
CADD
5.0
COUT
4.0
Max
9.0
10.0
10.0
6.5
Unit
pF
pF
pF
pF
Note
Rev. 0.0 July. 2002