K4S511632D Datasheet, PDF (3/9 Pages) Samsung semiconductor – DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL

K4S511632D
8M x 16Bit x 4 Banks Synchronous DRAM
CMOS SDRAM
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
GENERAL DESCRIPTION
The K4S511632D is 536,870,912 bits synchronous high data rate
Dynamic RAM organized as 4 x 8,392,608words by 16bits, fabri-
cated with SAMSUNG's high performance CMOS technology. Syn-
chronous design allows precise cycle control with the use of
system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and
programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system appli-
cations.
ORDERING INFORMATION
Part No.
K4S511632D-KC/L7C
K4S511632D-KC/L75
K4S511632D-KC/L1H
K4S511632D-KC/L1L
Max Freq. Interface Package
133MHz(CL=2)
133MHz(CL=3)
100MHz(CL=2)
LVTTL
54pin
TSOP(II)
100MHz(CL=3)
FUNCTIONAL BLOCK DIAGRAM
Bank Select
CLK
ADD
LCKE
LRAS LCBR
LWE
LCAS
Data Input Register
2 x 4M x 16
2 x 4M x 16
2 x 4M x 16
2 x 4M x 16
Column Decoder
Latency & Burst Length
Programming Register
LWCBR
LWE
LDQM
DQi
LDQM
Timing Register
CLK
CKE
CS
RAS
CAS
WE
DQM
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 July. 2002