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K1S3216B1C Datasheet, PDF (4/10 Pages) Samsung semiconductor – 2Mx16 bit Uni-Transistor Random Access Memory
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K1S3216B1C
Preliminary
UtRAM
FUNCTIONAL DESCRIPTION
CS1
CS2
OE
WE
LB
H
X1)
X1)
X1)
X1)
X1)
L
X1)
X1)
X1)
X1)
X1)
X1)
X1)
H
L
H
H
H
L
L
H
H
H
X1)
L
H
L
H
L
L
H
L
H
H
L
H
L
H
L
L
H
X1)
L
L
L
H
X1)
L
H
L
H
X1)
L
L
1. X means don′t care.(Must be low or high state)
UB
I/O1~8 I/O9~16
Mode
X1)
High-Z High-Z
Deselected
X1)
High-Z High-Z
Deselected
H
High-Z High-Z
Deselected
X1)
High-Z High-Z
Output Disabled
L
High-Z High-Z
Output Disabled
H
Dout High-Z
Lower Byte Read
L
High-Z Dout
Upper Byte Read
L
Dout
Dout
Word Read
H
Din
High-Z
Lower Byte Write
L
High-Z Din
Upper Byte Write
L
Din
Din
Word Write
Power
Standby
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS1)
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCC+0.3V
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 2.5V
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
-4-
Revision 0.1
June 2003
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