K9F1208Q0A Datasheet, PDF (38/39 Pages) Samsung semiconductor – 512Mb/256Mb 1.8V NAND Flash Errata

K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B)
and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can
be determined by the following guidance.
VCC
GND
Rp _ibusy
R/B
open drain output
C_L
Ready Vcc
1.8V device - VOL : 0.1V, VOH : VCCq-0.1V
3.3V device - VOL : 0.4V, VOH : 2.4V
VOH
VOL
Busy
tf
tr
Device
Fig 17 Rp vs tr ,tf & Rp vs ibusy
@ Vcc = 1.8V, Ta = 25°C , C_L = 30pF
@ Vcc = 3.3V, Ta = 25°C , C_L = 100pF
Ibusy
300n
2.4
400
Ibusy
3m
300n
1.2
300
3m
200n
100n
1.7
tr ^0.85
30
60
1.7 _tf
1.7
90
0.57
1.7
120
0.43
1.7
2m
200n
1m
100n
200
0.8
2m
tr
100
0.6
1m
3.6 _tf
3.6
3.6
3.6
1K
2K
3K
4K
Rp(ohm)
1K
2K
3K
4K
Rp(ohm)
Rp value guidance
VCC(Max.) - VOL(Max.)
Rp(min, 1.8V part) =
=
IOL + ΣIL
1.85V
3mA + ΣIL
VCC(Max.) - VOL(Max.)
Rp(min, 3.3V part) =
=
IOL + ΣIL
3.2V
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
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