K9F1208Q0A Datasheet, PDF (3/39 Pages) Samsung semiconductor – 512Mb/256Mb 1.8V NAND Flash Errata

K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F5608Q0C-D,H
K9F5616Q0C-D,H
K9F5608U0C-Y,P
K9F5608U0C-D,H
K9F5608U0C-V,F
K9F5616U0C-Y,P
K9F5616U0C-D,H
Vcc Range
1.70 ~ 1.95V
2.7 ~ 3.6V
Organization
X8
X16
X8
X16
PKG Type
TBGA
TSOP1
TBGA
WSOP1
TSOP1
TBGA
FEATURES
• Voltage Supply
• Fast Write Cycle Time
- 1.8V device(K9F56XXQ0C) : 1.70~1.95V
- Program time : 200µs(Typ.)
- 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V
- Block Erase Time : 2ms(Typ.)
• Organization
• Command/Address/Data Multiplexed I/O Port
- Memory Cell Array
• Hardware Data Protection
- X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit
- Program/Erase Lockout During Power Transitions
- X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit
• Reliable CMOS Floating-Gate Technology
- Data Register
- Endurance : 100K Program/Erase Cycles
- X8 device(K9F5608X0C) : (512 + 16)bit x 8bit
- Data Retention : 10 Years
- X16 device(K9F5616X0C) : (256 + 8)bit x16bit
• Command Register Operation
• Automatic Program and Erase
• Intelligent Copy-Back
- Page Program
• Unique ID for Copyright Protection
- X8 device(K9F5608X0C) : (512 + 16)Byte
• Power-On Auto-Read Operation
- X16 device(K9F5616X0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9F5608X0C) : (16K + 512)Byte
- X16 device(K9F5616X0C) : ( 8K + 256)Word
• Page Read Operation
• Safe Lock Mechanism
• Package
- K9F56XXU0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0C-DCB0/DIB0
- Page Size
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
- Random Access : 10µs(Max.)
- K9F5608U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXU0C-PCB0/PIB0
- Serial Page Access : 50ns(Min.)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F56XXX0C-HCB0/HIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F5608U0C-V,F(WSOPI ) is the same device as
GENERAL DESCRIPTION
K9F5608U0C-Y,P(TSOP1) except package type.
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200µs on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typ-
ical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The
I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all pro-
gram and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-
intensive systems can take advantage of the K9F56XXX0C′s extended reliability of 100K program/erase cycles by providing
ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F56XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
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