DS_K6F2016U4E Datasheet, PDF (3/9 Pages) Samsung semiconductor – 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E Family
CMOS SRAM
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
Function
K6F2016U4E-EF55
K6F2016U4E-EF70
48-TBGA, 55ns, 3.0V
48-TBGA, 70ns, 3.0V
FUNCTIONAL DESCRIPTION
CS
OE
WE
LB
UB
I/O1~8
I/O9~16
H
X¹⁾
X¹⁾
X¹⁾
X¹⁾
High-Z High-Z
X¹⁾
X¹⁾
X¹⁾
H
H
High-Z High-Z
L
H
H
L
X¹⁾
High-Z High-Z
L
H
H
X¹⁾
L
High-Z High-Z
L
L
H
L
H
Dout High-Z
L
L
H
H
L
High-Z Dout
L
L
H
L
L
Dout
Dout
L
X¹⁾
L
L
H
Din
High-Z
L
X¹⁾
L
H
L
High-Z
Din
L
X¹⁾
L
L
L
Din
Din
1. X means don′t care.(Must be low or high state.)
Mode
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS¹⁾
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.2 to VCC+0.3V
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 3.6V
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions longer than 1seconds may affect reliability.
-3-
Revision 2.0
September 2001