DS_K6F2016U4E Datasheet, PDF (1/9 Pages) Samsung semiconductor – 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E Family
CMOS SRAM
Document Title
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0
Initial Draft
1.0
Finalize
- Change ICC2 from 21 to 26mA for 55ns product.
- Change ICC2 from 17 to 20mA for 70ns product.
- Remove "A1 Index Mark" of 48-TBGA package bottom side
2.0
Revise
- Changed 48-TBGA vertical dimension
E1(Typical) 0.55mm to 0.58mm
E2(Typical) 0.35mm to 0.32mm
Draft Date
February 21, 2001
Remark
Preliminary
April 30, 2001
Final
September 27, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 2.0
September 2001