DS_K6F2016U4E Datasheet, PDF (2/9 Pages) Samsung semiconductor – 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E Family
CMOS SRAM
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 128K x16 bit
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-TBGA-6.00x7.00
GENERAL DESCRIPTION
The K6F2016U4E families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
industrial temperature range and 48 ball Chip Scale Package
for user flexibility of system design. The families also support
low data retention voltage for battery back-up operation with
low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed
K6F2016U4E-F
Industrial(-40~85°C)
2.7~3.3V
55¹⁾/70ns
1. The parameter is measured with 30pF test load.
2. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
Power Dissipation
Standby
(ISB1, Typ.)
Operating
(ICC1, Max)
PKG Type
0.5µA²⁾
2mA
48-TBGA-6.00x7.00
PIN DESCRIPTION
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
DNU
B
I/O9
UB
A3
A4
CS1
I/O1
C
I/O10 I/O11
A5
A6
I/O2
I/O3
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
Addresses
Row
select
Precharge circuit.
Vcc
Vss
Memory array
1024 rows
128 × 16 columns
D
Vss I/O12 DNU
A7
I/O4
Vcc
E
Vcc I/O13 DNU
A16
I/O5
Vss
F
I/O15 I/O14 A14
A15
I/O6
I/O7
G
I/O16 DNU A12
A13
WE
I/O8
H
DNU
A8
A9
A10
A11
DNU
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
48-TBGA: Top View (Ball Down)
Name
Function
CS1, CS2 Chip Select Inputs
OE Output Enable Input
WE Write Enable Input
A0~A16 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
Name
Vcc
Vss
UB
LB
DNU
Function
Power
Ground
Upper Byte(I/O9~16)
Lower Byte(I/O1~8)
Do Not Use
CS
OE
WE
Control Logic
UB
LB
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
-2-
Revision 2.0
September 2001