K9K1G08U0A Datasheet, PDF (25/43 Pages) Samsung semiconductor – 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08Q0A K9K1G16Q0A
K9K1G08U0A K9K1G16U0A
Sequential Row Read Operation (Within a Block)
CLE
Preliminary
FLASH MEMORY
CE
WE
ALE
RE
I/O0~7
R/B
00h A0 ~ A7 A9 ~ A16 A17 ~ A24 A25,A26
Dout
N
Dout
N+1
Busy
Ready
Dout
527
Dout
0
Dout
1
Dout
527
Busy
M
M+1
N
Output
Output
Page Program Operation
CLE
CE
tWC
tWC
WE
ALE
tWC
tWB tPROG
RE
I/O0~7
R/B
80h
A0 ~ A7 A9 ~ A16 A17 ~ A24 A25,A26
Sequential Data Column
Input Command Address
Page(Row)
Address
Din
N
Din
527
10h
1 up to 528 Byte Data Program
Serial Input
Command
70h
I/O0
Read Status
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
25