K9K1G08U0A Datasheet, PDF (1/43 Pages) Samsung semiconductor – 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08Q0A K9K1G16Q0A
K9K1G08U0A K9K1G16U0A
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Preliminary
FLASH MEMORY
Revision History
Revision No. History
0.0
Initial issue.
0.1
1. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
2. 63FBGA,1.8V product is added.
K9K1GXXQ0A-GCB0,GIB0,JCB0,JIB0
0.2
Errata is deleted.
AC parameters are changed.
tWC tWH tWP tRC tREH tRP tREA tCEA
Before 45 15 25 50 15 25 30 45
After 60 20 40 60 20 40 40 55
Draft Date Remark
Mar. 17th 2003 Preliminary
Jun. 4th 2003 _Preliminary
Aug. 1st 2003
Preliminary
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1