K9K1G08U0A Datasheet, PDF (17/43 Pages) Samsung semiconductor – 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08Q0A K9K1G16Q0A
K9K1G08U0A K9K1G16U0A
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Start
Write 60h
Write Block Address
Write D0h
Read Status Register
Preliminary
FLASH MEMORY
Read Flow Chart
Start
Write 00h
Write Address
Read Data
ECC Generation
I/O 6 = 1 ?
No
or R/B = 1 ?
*
No
Erase Error
Yes
I/O 0 = 0 ?
Yes
Erase Completed
No
Reclaim the Error
Verify ECC
Yes
Page Read Completed
* : If erase operation results in an error, map out
the failing block and replace it with another block.
Block Replacement
Buffer
memory
error occurs
Page a
Block A
When the error happens with page "a" of Block "A", try
to write the data into another Block "B" from an exter-
nal buffer. Then, prevent further system access to
Block "A" (by creating a "invalid block" table or other
appropriate scheme.)
Block B
17